Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20N60BC3G APT20N60BC3G

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768682-APT20N60BC3G Series: CoolMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Part Status: Obsolete(EOL) Family Name: APT20N60BC3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247-3 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2440pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 208W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Alternative Parts (Cross-Reference): SPW20N60S5; APT20N60BC3; APT20N60BC3G; IXKH20N60C5; SPW20N60S5X; R6520KNZ1C9; R6520ENZ1C9; SPW20N60C2; Introduction Date: November 13, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768682-APT20N60BC3G Series: CoolMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Part Status: Obsolete(EOL) Family Name: APT20N60BC3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247-3 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2440pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 208W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Alternative Parts (Cross-Reference): SPW20N60S5; APT20N60BC3; APT20N60BC3G; IXKH20N60C5; SPW20N60S5X; R6520KNZ1C9; R6520ENZ1C9; SPW20N60C2; Introduction Date: November 13, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20N60BC3G - 768682-APT20N60BC3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20N60BC3G
768682-APT20N60BC3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20N60BC3G 768682-APT20N60BC3G
Manufacturer: Microsemi Corporation Win Source Part Number: 768682-APT20N60BC3G Series: CoolMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Part Status: Obsolete(EOL) Family Name: APT20N60BC3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247-3 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2440pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 208W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Alternative Parts (Cross-Reference): SPW20N60S5; APT20N60BC3; APT20N60BC3G; IXKH20N60C5; SPW20N60S5X; R6520KNZ1C9; R6520ENZ1C9; SPW20N60C2; Introduction Date: November 13, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Microsemi Corporation
Win Source Part Number: 768682-APT20N60BC3G
Series: CoolMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Part Status: Obsolete(EOL)
Family Name: APT20N60BC3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247-3
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2440pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 208W (Tc)
Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
Alternative Parts (Cross-Reference): SPW20N60S5; APT20N60BC3; APT20N60BC3G; IXKH20N60C5; SPW20N60S5X; R6520KNZ1C9; R6520ENZ1C9; SPW20N60C2;
Introduction Date: November 13, 2002
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT20N60BC3G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT20N60BC3G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT20N60BC3G
MOSFET N-CH 600V 20.7A TO247-3

MOSFET N-CH 600V 20.7A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 768682-APT20N60BC3G APT20N60BC3G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20N60BC3G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 208000 milliwatts
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