Microsemi Corp. MOSFET APT20M38BVRG

APT20M38BVR is an N-channel enhancement mode power MOSFET designed for high-voltage switching applications, housed in a TO-247 package. It has a drain-source breakdown voltage of 200 V, a continuous drain current of 67 A at 25°C, and a drain-source on-state resistance of 0.038 Ω at VGS = 10 V. The device features a gate-source voltage rating of -30 V continuous and -40 V transient, with a total power dissipation of 370 W at 25°C. It is 100% avalanche tested, with a single-pulse avalanche energy rating of 1300 mJ and an avalanche current rating of 67 A. The junction-to-case thermal resistance is 0.34 °C/W, and the operating junction temperature ranges from -55°C to 150°C. The part meets RoHS standards and is packaged in a standard TO-247 case with dimensions specified in millimeters and inches.