Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20M38BVFRG APT20M38BVFRG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1017993-APT20M38BVFR G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 225nC @ 10V Max Input Capacitance: 6120pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 38 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 1
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1017993-APT20M38BVFR G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 225nC @ 10V Max Input Capacitance: 6120pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 38 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20M38BVFRG - 1017993-APT20M38BVFRG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20M38BVFRG
1017993-APT20M38BVFRG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20M38BVFRG 1017993-APT20M38BVFRG
Manufacturer: Microsemi Corporation Win Source Part Number: 1017993-APT20M38BVFR G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 225nC @ 10V Max Input Capacitance: 6120pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 38 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1017993-APT20M38BVFRG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 67A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 225nC @ 10V
Max Input Capacitance: 6120pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 38 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT20M38BVFRG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT20M38BVFRG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT20M38BVFRG
MOSFET N-CH 200V 67A TO247

MOSFET N-CH 200V 67A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1017993-APT20M38BVFRG APT20M38BVFRG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20M38BVFRG Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 370000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS206 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor - T1G4020036-FS - Qorvo
Specs
Transistor Technology / Material DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-650 Flanged (Earless)
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1248S - 855022-2SA1248S - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details