Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT14M120B APT14M120B

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199254-APT14M120B Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 145nC @ 10V Max Input Capacitance: 4765pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199254-APT14M120B Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 145nC @ 10V Max Input Capacitance: 4765pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT14M120B - 199254-APT14M120B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT14M120B
199254-APT14M120B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT14M120B 199254-APT14M120B
Manufacturer: Microsemi Corporation Win Source Part Number: 199254-APT14M120B Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 145nC @ 10V Max Input Capacitance: 4765pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 199254-APT14M120B
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 145nC @ 10V
Max Input Capacitance: 4765pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Sheung Wan, Hong Kong
MOSFET FG, MOSFET, 1200V, TO-247

MOSFET FG, MOSFET, 1200V, TO-247

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 199254-APT14M120B APT14M120B
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT14M120B MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 1200 volts
PD 625000 milliwatts
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