Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12F60K APT12F60K

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199252-APT12F60K Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 [K] Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 5V @ 500μA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 620 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12F60K - 199252-APT12F60K - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT12F60K - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199252-APT12F60K Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 [K] Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 5V @ 500μA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 620 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12F60K - 199252-APT12F60K - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12F60K
199252-APT12F60K
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12F60K 199252-APT12F60K
Manufacturer: Microsemi Corporation Win Source Part Number: 199252-APT12F60K Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 [K] Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 5V @ 500μA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 620 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Microsemi Corporation
Win Source Part Number: 199252-APT12F60K
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 225W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 [K]
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 500μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 620 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT12F60K - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT12F60K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT12F60K
MOSFET N-CH 600V 12A TO220

MOSFET N-CH 600V 12A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 199252-APT12F60K APT12F60K
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12F60K Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 225000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products