Microsemi Corp. MOSFET APT10078SLLG

The APT10078SLLG is an N-channel enhancement mode MOSFET from the Power MOS 7® series, designed for high-voltage switching applications with low conduction and switching losses. It is packaged in a D3PAK surface-mount configuration, with a maximum drain-source voltage of 1000 V and a continuous drain current of 14 A at 25°C. The device has a drain-source on-state resistance of 0.780 Ω at VGS = 10 V and ID = 7 A, and a total gate charge of 95 nC. The maximum junction temperature is 150°C, with a junction-to-case thermal resistance of 0.31 °C/W. The part meets RoHS standards and is rated for repetitive avalanche current up to 14 A with 30 mJ repetitive avalanche energy. The D3PAK package dimensions are given as 13.41 by 13.51 mm.