Microsemi Corp. MOSFET APT10050LVRG

The APT10050LVR is a 1000 V N-channel enhancement-mode power MOSFET in a TO-264 package, designed for high-voltage switching applications. It has a continuous drain current of 21 A and a maximum on-state resistance of 0.500 Ω at VGS = 10 V. The device is 100% avalanche tested with a repetitive avalanche energy rating of 50 mJ and a single-pulse avalanche energy of 2500 mJ. The gate-source voltage rating is -30 V continuous and -40 V transient. Power dissipation is 520 W at 25°C with a thermal derating of 4.16 W/°C. Junction temperature ranges from -55°C to 150°C. The body diode supports a continuous source current of 21 A and has a forward voltage of 1.3 V at ID[Cont.]. Input capacitance is 6600 to 7900 pF, and total gate charge is 335 to 500 nC at VGS = 10 V. Thermal resistance from junction to case is 0.24°C/W.