Microsemi Corp. MOSFET APT10035JLL

The APT10035JLL is an N-channel enhancement mode power MOSFET designed for high-voltage switching applications with a 1000 V drain-source breakdown voltage and a continuous drain current rating of 25 A at 25°C. It features a low on-state resistance of 0.350 Ω at 10 V gate-source voltage and is packaged in the SOT-227 (ISOTOP®) case. The device has a maximum power dissipation of 520 W at 25°C with a junction-to-case thermal resistance of 0.24 °C/W, and operates within a junction temperature range of -55°C to 150°C. It meets UL 94 V-0 flammability standards and is rated for repetitive and single-pulse avalanche energy of 50 mJ and 3000 mJ respectively. Gate-source voltage is rated at ±30 V continuous and ±40 V transient, with a total gate charge of 186 nC at 10 V gate drive.