Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT10035B2FLLG APT10035B2FLLG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768655-APT10035B2FLL G Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: APT10035B2FLLG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5185pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 690W (Tc) Rds On (Maximum) @ Id, Vgs: 370 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IXFK30N100Q2SN; IXFX30N100Q2; IXFK30N100Q2; STW22N95K5; Introduction Date: March 17, 1997 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768655-APT10035B2FLL G Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: APT10035B2FLLG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5185pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 690W (Tc) Rds On (Maximum) @ Id, Vgs: 370 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IXFK30N100Q2SN; IXFX30N100Q2; IXFK30N100Q2; STW22N95K5; Introduction Date: March 17, 1997 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT10035B2FLLG - 768655-APT10035B2FLLG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT10035B2FLLG
768655-APT10035B2FLLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT10035B2FLLG 768655-APT10035B2FLLG
Manufacturer: Microsemi Corporation Win Source Part Number: 768655-APT10035B2FLL G Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Family Name: APT10035B2FLLG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5185pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 690W (Tc) Rds On (Maximum) @ Id, Vgs: 370 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): IXFK30N100Q2SN; IXFX30N100Q2; IXFK30N100Q2; STW22N95K5; Introduction Date: March 17, 1997 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 768655-APT10035B2FLLG
Series: POWER MOS 7
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Family Name: APT10035B2FLLG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: T-MAX [B2]
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5185pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 690W (Tc)
Rds On (Maximum) @ Id, Vgs: 370 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): IXFK30N100Q2SN; IXFX30N100Q2; IXFK30N100Q2; STW22N95K5;
Introduction Date: March 17, 1997
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 768655-APT10035B2FLLG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT10035B2FLLG
PD 690000 milliwatts
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