Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N930 2N930

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124272-2N930 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 (TO-206AA) Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 30mA Voltage - Collector Emitter Breakdown (Maximum): 45V Current - Collector Cutoff (Maximum): 2nA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 500μA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 10μA, 5V Maximum Power: 300mW
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124272-2N930 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 (TO-206AA) Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 30mA Voltage - Collector Emitter Breakdown (Maximum): 45V Current - Collector Cutoff (Maximum): 2nA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 500μA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 10μA, 5V Maximum Power: 300mW
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N930 - 1124272-2N930 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N930
1124272-2N930
TRANSISTORS - Transistors (BJT) - Single - 2N930 1124272-2N930
Manufacturer: Microsemi Corporation Win Source Part Number: 1124272-2N930 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 (TO-206AA) Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 30mA Voltage - Collector Emitter Breakdown (Maximum): 45V Current - Collector Cutoff (Maximum): 2nA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 500μA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 10μA, 5V Maximum Power: 300mW

Manufacturer: Microsemi Corporation
Win Source Part Number: 1124272-2N930
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-18 (TO-206AA)
Temperature Range - Operating: -55°C ~ 200°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-206AA, TO-18-3 Metal Can
Current - Collector (Ic) (Maximum): 30mA
Voltage - Collector Emitter Breakdown (Maximum): 45V
Current - Collector Cutoff (Maximum): 2nA
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1V at 500μA, 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 10μA, 5V
Maximum Power: 300mW

Buy Now
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N930
Bipolar Transistors - BJT 2N930
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

Buy Now Datasheet

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 1124272-2N930 2N930
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N930 Bipolar Transistors - BJT
Polarity NPN
Unlock Full Specs
to access all available technical data