Microsemi Corp. Bipolar Transistors - BJT 2N918UB/TR

The 2N918UB/TR is a low-power NPN silicon transistor in a surface-mount TO-72 package, designed for general-purpose amplification and switching applications. It features a collector-emitter voltage rating of 15 Vdc, collector current of 50 mAdc, and total power dissipation of 200 mW at +25°C. The device meets MIL-PRF-19500/301 qualification standards. Electrical characteristics include a forward-current transfer ratio (hFE) of 20 to 200 at 3.0 mA collector current and 1.0 V collector-emitter voltage, collector-emitter saturation voltage of 0.4 Vdc at 10 mA collector and 1 mA base current, and base-emitter saturation voltage of 1.0 Vdc under the same conditions. The case is electrically connected and serves as the fourth terminal. Dimensions for the surface-mount variant are specified with lead spacing of 2.54 mm and overall body dimensions within defined tolerances.