Microsemi Corp. Bipolar Transistors - BJT 2N918/TR

The 2N918/TR is an NPN low-power silicon transistor in a TO-72 package, designed for general-purpose amplification and switching applications. It has a collector-emitter voltage rating of 15 Vdc, a collector current limit of 50 mAdc, and a total power dissipation of 200 mW at 25°C, derating linearly at 1.14 mW/°C above this temperature. The device operates over a junction temperature range of -65°C to +200°C and is qualified to MIL-PRF-19500/301. Its forward current transfer ratio ranges from 10 to 200, with a collector-emitter saturation voltage of 0.4 Vdc at 10 mA collector current and 1 mA base current. The TO-72 package has three leads, with the case electrically connected as the fourth terminal.