Microsemi Corp. Bipolar Transistors - BJT 2N6990

The 2N6990 is a quad NPN silicon switching transistor in a 14-pin flat pack package. It features a collector-emitter voltage rating of 50 Vdc, a collector-base voltage rating of 75 Vdc, and a maximum collector current of 800 mAdc. Total power dissipation is rated at 0.4 W at +25°C, derating linearly at 2.286 mW/°C above that temperature. The device meets MIL-PRF-19500/559 qualification standards. Forward current transfer ratio (hFE) ranges from 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 1.0 V at 500 mA collector current and 50 mA base current. Base-emitter saturation voltage is 2.0 V under the same conditions. Output and input capacitances are 8.0 pF and 25 pF respectively, measured at 100 kHz to 1.0 MHz. Operating and storage junction temperatures range from -65°C to +200°C.