Quad NPN silicon switching transistor array in a 20-pin leadless package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.4 W at +25°C. Operating and storage junction temperature range is -65°C to +200°C. Devices are qualified per MIL-PRF-19500/559.
Bipolar Transistors - BJT
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N6990/TR |
| Product Name | Bipolar Transistors - BJT |