Microsemi Corp. Bipolar Transistors - BJT 2N6990/TR

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Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
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Quad NPN silicon switching transistor array in a 20-pin leadless package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.4 W at +25°C. Operating and storage junction temperature range is -65°C to +200°C. Devices are qualified per MIL-PRF-19500/559.

Datasheet Summary
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Quad NPN silicon switching transistor array in a 20-pin leadless package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.4 W at +25°C. Operating and storage junction temperature range is -65°C to +200°C. Devices are qualified per MIL-PRF-19500/559.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6990/TR
Bipolar Transistors - BJT 2N6990/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N6990/TR
Product Name Bipolar Transistors - BJT
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