Microsemi Corp. Bipolar Transistors - BJT 2N6989U

The 2N6989U is a quad NPN silicon switching transistor in a 20-pin leadless package, rated for a collector-emitter voltage of 50 Vdc, collector-base voltage of 75 Vdc, and emitter-base voltage of 6.0 Vdc. Each transistor admits a collector current of up to 800 mAdc and dissipates 1.0 W at +25°C, derating linearly at 8.57 mW/°C above that temperature. The device operates over a junction temperature range of -65°C to +200°C. It meets MIL-PRF-19500/559 qualification standards with JANS and JANTXV levels. Forward current transfer ratio ranges from 30 to 300 depending on current, with collector-emitter saturation voltage up to 1.0 Vdc at 500 mA collector current and 50 mA base current. Input and output capacitances are 25 pF and 8.0 pF respectively.