Microsemi Corp. Bipolar Transistors - BJT 2N6989U/TR

The 2N6989U/TR is a quad NPN silicon switching transistor array in a 20-pin leadless package, designed for high-reliability switching applications. Each transistor has a collector-emitter voltage rating of 50 Vdc, a collector current of 800 mAdc, and a total power dissipation of 1.0 W at +25°C, derating linearly at 8.57 mW/°C above that temperature. The operating and junction temperature range is -65°C to +200°C. The device meets MIL-PRF-19500/559 qualification standards. Forward current transfer ratio (hFE) ranges from 100 to 300 at I_C = 10 to 150 mA and V_CE = 10 V. Collector-emitter saturation voltage is 1.0 V at I_C = 500 mA and I_B = 50 mA. Output and input capacitances are 8.0 pF and 25 pF respectively under specified conditions.