Microsemi Corp. Bipolar Transistors - BJT 2N6988

Quad PNP silicon switching transistors in a 14-pin flat pack or 20-pin leadless package, rated for a collector-emitter voltage of 60 Vdc and a collector current of 600 mAdc per transistor. Power dissipation is derated at 2.286 mW/°C above +25°C, with a maximum of 0.4 W. The devices feature a forward-current transfer ratio between 50 and 450, collector-emitter saturation voltage up to 1.6 V, and base-emitter saturation voltage up to 2.6 V. Operating and storage junction temperatures range from -65°C to +200°C. Qualified per MIL-PRF-19500/558.