Microsemi Corp. Bipolar Transistors - BJT 2N6988/TR

Quad PNP silicon switching transistor array in a 20-pin leadless package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.4 W at +25°C, derating linearly at 2.286 mW/°C above that temperature. Operating and storage junction temperature ranges from -65°C to +200°C. Meets MIL-PRF-19500/558 qualification standards. Forward current transfer ratio ranges from 50 to 300 at 150 mA collector current. Collector-emitter saturation voltage is 1.6 Vdc at 500 mA collector current and 50 mA base current. Base-emitter saturation voltage is 2.6 Vdc under the same conditions. Output capacitance is 8.0 pF and input capacitance is 30 pF.