Microsemi Corp. Bipolar Transistors - BJT 2N6987

The 2N6987 is a quad PNP silicon switching transistor in a 20-pin leadless package, designed for high-reliability switching applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current limit of 600 mAdc, and a total power dissipation of 1.5 W at +25°C, derating linearly at 8.57 mW/°C above that temperature. The device operates over a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/558 qualification standards. Electrical characteristics include a forward-current transfer ratio (hFE) ranging from 50 to 450 depending on bias conditions, a collector-emitter saturation voltage of up to 1.6 V at 500 mA collector current, and input/output capacitances of 30 pF and 8.0 pF respectively. All ratings apply to each transistor within the array.