Microsemi Corp. Bipolar Transistors - BJT 2N697

The 2N697 is an NPN medium power silicon switching transistor in a TO-5 package, rated for a collector-base voltage of 60 Vdc and an emitter-base voltage of 5.0 Vdc. It dissipates up to 2.0 W at a case temperature of 25°C, with a junction temperature range of -65 to +200°C. The forward current transfer ratio (hFE) ranges from 40 to 120 at a collector current of 500 mA and a collector-emitter voltage of 10 Vdc. Collector-emitter saturation voltage is specified at 1.5 V max under 150 mA collector and 15 mA base current. Turn-on time is 200 µs and turn-off time is 1,000 µs. The device is qualified per MIL-PRF-19500/99.