Microsemi Corp. Bipolar Transistors - BJT 2N696S

NPN medium power silicon switching transistor in a TO-5 package, qualified per MIL-PRF-19500/99. Collector-base voltage rated at 60 Vdc, emitter-base voltage at 5.0 Vdc, and total power dissipation of 2.0 W at case temperature 25°C. Operating and storage junction temperature range is -65 to +200°C. Thermal resistance junction-to-case is 0.075°C/mW. Forward-current transfer ratio (hFE) ranges from 20 to 60 at collector current 150 mA and collector-emitter voltage 10 V. Collector-emitter saturation voltage is 0.3 to 1.5 V at collector and base currents of 150 mA and 15 mA respectively. Turn-on time is 200 µs, turn-off time is 1,000 µs.