Microsemi Corp. FETs - Single - 2N6901 2N6901

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124212-2N6901 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 8.33W Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.69A Rds On (Maximum) at Id, Vgs: 2.6Ohm at 1.07A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 1nC at 5V Gate Source Voltage (Maximum): ±10V
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124212-2N6901 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 8.33W Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.69A Rds On (Maximum) at Id, Vgs: 2.6Ohm at 1.07A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 1nC at 5V Gate Source Voltage (Maximum): ±10V
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Suppliers

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FETs - Single - 2N6901 - 1124212-2N6901 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - 2N6901
1124212-2N6901
FETs - Single - 2N6901 1124212-2N6901
Manufacturer: Microsemi Corporation Win Source Part Number: 1124212-2N6901 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AF Metal Can Power Dissipation (Maximum): 8.33W Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.69A Rds On (Maximum) at Id, Vgs: 2.6Ohm at 1.07A, 5V Gate Source Voltage(th) (Maximum) at Id: 2V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 1nC at 5V Gate Source Voltage (Maximum): ±10V

Manufacturer: Microsemi Corporation
Win Source Part Number: 1124212-2N6901
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-205AF Metal Can
Power Dissipation (Maximum): 8.33W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 1.69A
Rds On (Maximum) at Id, Vgs: 2.6Ohm at 1.07A, 5V
Gate Source Voltage(th) (Maximum) at Id: 2V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 1nC at 5V
Gate Source Voltage (Maximum): ±10V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N6901 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N6901
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N6901
MOSFET N-CH 100V 1.69A TO39

MOSFET N-CH 100V 1.69A TO39

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1124212-2N6901 2N6901
Product Name FETs - Single - 2N6901 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 8330 milliwatts
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