Microsemi Corp. FETs - Single - 2N6804 2N6804

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124205-2N6804 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-204AA (TO-3) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-204AA, TO-3 Power Dissipation (Maximum): 4W, 75W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 360mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V Gate Source Voltage (Maximum): ±20V
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124205-2N6804 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-204AA (TO-3) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-204AA, TO-3 Power Dissipation (Maximum): 4W, 75W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 360mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V Gate Source Voltage (Maximum): ±20V
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Suppliers

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FETs - Single - 2N6804 - 1124205-2N6804 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - 2N6804
1124205-2N6804
FETs - Single - 2N6804 1124205-2N6804
Manufacturer: Microsemi Corporation Win Source Part Number: 1124205-2N6804 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-204AA (TO-3) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-204AA, TO-3 Power Dissipation (Maximum): 4W, 75W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 360mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V Gate Source Voltage (Maximum): ±20V

Manufacturer: Microsemi Corporation
Win Source Part Number: 1124205-2N6804
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-204AA, TO-3
Power Dissipation (Maximum): 4W, 75W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 360mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V
Gate Source Voltage (Maximum): ±20V

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Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N6804
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N6804
MOSFET P-CH 100V 11A TO204AA

MOSFET P-CH 100V 11A TO204AA

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1124205-2N6804 2N6804
Product Name FETs - Single - 2N6804 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 100 volts
PD 4000 to 75000 milliwatts
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