Microsemi Corp. FETs - Single - 2N6796U 2N6796U

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124202-2N6796U Packaging: Bulk Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 18-ULCC (9.14x7.49) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: 18-CLCC Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 8A Rds On (Maximum) at Id, Vgs: 180mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250mA Gate Charge (Qg) (Maximum) at Vgs: 6.34nC at 10V Gate Source Voltage (Maximum): ±20V
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1124202-2N6796U Packaging: Bulk Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 18-ULCC (9.14x7.49) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: 18-CLCC Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 8A Rds On (Maximum) at Id, Vgs: 180mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250mA Gate Charge (Qg) (Maximum) at Vgs: 6.34nC at 10V Gate Source Voltage (Maximum): ±20V
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Suppliers

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FETs - Single - 2N6796U - 1124202-2N6796U - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - 2N6796U
1124202-2N6796U
FETs - Single - 2N6796U 1124202-2N6796U
Manufacturer: Microsemi Corporation Win Source Part Number: 1124202-2N6796U Packaging: Bulk Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 18-ULCC (9.14x7.49) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: 18-CLCC Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 8A Rds On (Maximum) at Id, Vgs: 180mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250mA Gate Charge (Qg) (Maximum) at Vgs: 6.34nC at 10V Gate Source Voltage (Maximum): ±20V

Manufacturer: Microsemi Corporation
Win Source Part Number: 1124202-2N6796U
Packaging: Bulk
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: 18-CLCC
Power Dissipation (Maximum): 800mW, 25W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 8A
Rds On (Maximum) at Id, Vgs: 180mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250mA
Gate Charge (Qg) (Maximum) at Vgs: 6.34nC at 10V
Gate Source Voltage (Maximum): ±20V

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Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N6796U
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N6796U
MOSFET N-CH 100V 8A 18ULCC

MOSFET N-CH 100V 8A 18ULCC

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1124202-2N6796U 2N6796U
Product Name FETs - Single - 2N6796U Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 800 to 25000 milliwatts
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