Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N6213 2N6213

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 197471-2N6213 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 200°C (TJ) Case / Package: TO-66 (TO-213AA) Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 2V @ 125mA, 1A Collector Cut-off Current(Max): 5mA Typical Gain (hFE) (Min): 30 @ 1A, 5V Maximum Power Dissipation: 3W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors (BJT) - Single - 2N6213 - 197471-2N6213 - Win Source Electronics
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 197471-2N6213 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 200°C (TJ) Case / Package: TO-66 (TO-213AA) Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 2V @ 125mA, 1A Collector Cut-off Current(Max): 5mA Typical Gain (hFE) (Min): 30 @ 1A, 5V Maximum Power Dissipation: 3W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors (BJT) - Single - 2N6213 - 197471-2N6213 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6213
197471-2N6213
TRANSISTORS - Transistors (BJT) - Single - 2N6213 197471-2N6213
Manufacturer: Microsemi Corporation Win Source Part Number: 197471-2N6213 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 200°C (TJ) Case / Package: TO-66 (TO-213AA) Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 2V @ 125mA, 1A Collector Cut-off Current(Max): 5mA Typical Gain (hFE) (Min): 30 @ 1A, 5V Maximum Power Dissipation: 3W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 197471-2N6213
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 200°C (TJ)
Case / Package: TO-66 (TO-213AA)
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 350V
Max Vce (sat): 2V @ 125mA, 1A
Collector Cut-off Current(Max): 5mA
Typical Gain (hFE) (Min): 30 @ 1A, 5V
Maximum Power Dissipation: 3W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 197471-2N6213 2N6213
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N6213 Bipolar Transistors - BJT
Polarity PNP; PNP
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