Microsemi Corp. Bipolar Transistors - BJT 2N6212

The 2N6212 is a PNP high-power silicon transistor designed for high-voltage switching applications. It is packaged in a TO-66 case and qualified per MIL-PRF-19500/461 at JAN, JANTX, and JANTXV levels. The device has a maximum collector-emitter voltage of 300 Vdc, a collector-base voltage of 350 Vdc, and a collector current rating of 2.0 Adc. Total power dissipation is 3.0 W at 25°C, with derating of 200 mW/°C above that temperature. Thermal resistance from junction to case is 5.0 °C/W. The minimum current gain (hFE) is 10 at 1.0 A and 3.2 V, with a collector-emitter saturation voltage of 1.6 V at 1.0 A collector and 0.125 A base current. Turn-on time is 0.6 µs and turn-off time is 3.1 µs under specified pulse conditions. The operating and storage temperature range is -55°C to +200°C.