Microsemi Corp. Bipolar Transistors - BJT 2N5796U

The 2N5796U is a PNP dual silicon transistor in a 6-pin surface-mount TO-78 package, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current of 600 mAdc, and a total power dissipation of 0.6 W at +25°C. The device features a forward-current transfer ratio (hFE) ranging from 100 to 300 at I_C = 150 mA and V_CE = 10 V. Collector-emitter saturation voltage is 0.4 V at I_C = 150 mA and I_B = 15 mA. Operating and storage junction temperature ranges from -65°C to +175°C. The part is qualified per MIL-PRF-19500/496. Output capacitance is 8.0 pF at V_CB = 10 V and I_E = 0. Input capacitance is 25 pF at V_EB = 2.0 V and I_C = 0. Turn-on time is 50 µs and turn-off time is 140 µs under specified switching conditions.