Microsemi Corp. Bipolar Transistors - BJT 2N5796U/TR

The 2N5796U/TR is a PNP dual silicon transistor in a 6-pin surface mount TO-78 package, designed for general-purpose amplification and switching applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 600 mAdc, and a maximum power dissipation of 0.6 W at +25°C. The device operates over a junction and storage temperature range of -65°C to +175°C. The forward current transfer ratio (hFE) ranges from 100 to 300 at IC = 150 mA and VCE = 10 V. It is qualified to MIL-PRF-19500/496 for JAN, JANTX, and JANTXV levels. Switching times are 50 µs turn-on and 140 µs turn-off under specified conditions.