Microsemi Corp. Bipolar Transistors - BJT 2N5796

The 2N5796 is a PNP dual silicon transistor for high-reliability applications, packaged in a 6-pin surface-mount TO-78 case. It has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.6 W at +25°C. The device exhibits a current gain (hFE) of 100 to 300 at 150 mAdc collector current and 10 Vdc collector-emitter voltage, with a collector-emitter saturation voltage of 0.4 V at 150 mAdc and 15 mAdc base current. Turn-on and turn-off times are 50 µs and 140 µs respectively. It is qualified to MIL-PRF-19500/496 with an operating and storage junction temperature range of -65°C to +175°C.