Microsemi Corp. Bipolar Transistors - BJT 2N5796/TR

The 2N5796 is a PNP dual silicon transistor in a TO-78 package, intended for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current of 600 mAdc, and a total power dissipation of 0.6 W at +25°C. The device operates over a junction and storage temperature range of -65°C to +175°C. The forward current transfer ratio (hFE) ranges from 100 to 300 at IC = 150 mA and VCE = 10 V. Collector-emitter saturation voltage is 0.4 V at IC = 150 mA and IB = 15 mA, and base-emitter saturation voltage is 1.3 V under the same conditions. Switching times are 50 µs for turn-on and 140 µs for turn-off. The part is qualified to MIL-PRF-19500/496 standards.