Microsemi Corp. Bipolar Transistors - BJT 2N5795

The 2N5795 is a PNP dual silicon transistor designed for general-purpose switching and amplification applications. It is packaged in a TO-78 case, with a maximum collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at +25°C. The device operates within a junction and storage temperature range of -65°C to +175°C. Forward current transfer ratio ranges from 40 to 150 for collector currents up to 150 mA at V_CE = 10 Vdc. Collector-emitter saturation voltage is 0.4 V at I_C = 150 mA and I_B = 15 mA. The transistor meets MIL-PRF-19500/496 qualification standards and is designed for high-reliability military and aerospace applications.