Microsemi Corp. Bipolar Transistors - BJT 2N5795/TR

Dual PNP silicon transistor for high-reliability applications, housed in a TO-78 package with a 6-pin surface mount configuration. Rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.6 W at +25°C. Operating and storage junction temperature range spans from -65°C to +175°C. Meets MIL-PRF-19500/496 qualification standards. Forward current transfer ratio (hFE) ranges from 40 to 150 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current. Switching times include a turn-on time of 50 μs and turn-off time of 140 μs under specified conditions.