Microsemi Corp. Bipolar Transistors - BJT 2N5794U

The 2N5794U is a silicon NPN dual transistor in a TO-78 package, designed for high-reliability applications. It has a collector-emitter voltage rating of 40 Vdc, a collector current limit of 600 mAdc, and a total power dissipation of up to 0.6 W at +25°C. The device operates over a junction temperature range of -65°C to +200°C. Its forward current transfer ratio (hFE) ranges from 75 to 300 at I_C = 10 mA and V_CE = 10 V. Collector-emitter saturation voltage is 0.3 V at I_C = 150 mA and I_B = 15 mA, with a base-emitter saturation voltage up to 1.2 V. Turn-on time is 45 µs and turn-off time is 310 µs under specified conditions. The part is qualified per MIL-PRF-19500/495.