Microsemi Corp. Bipolar Transistors - BJT 2N5794U/TR

The 2N5794U/TR is a silicon NPN dual transistor in a TO-78 package, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 40 Vdc, a collector current of 600 mAdc, and a total power dissipation of 0.6 W at +25°C. The operating and storage junction temperature range is -65°C to +200°C. Its forward current transfer ratio ranges from 300 to 300 at I_C = 10 mA and V_CE = 10 V. The collector-emitter saturation voltage is 0.9 V at I_C = 300 mA and I_B = 30 mA, and the base-emitter saturation voltage is 1.8 V under the same conditions. The device meets MIL-PRF-19500/495 qualification standards for JAN, JANTX, and JANTXV levels.