Microsemi Corp. Bipolar Transistors - BJT 2N5793

The 2N5793 is a silicon NPN dual transistor in a TO-78 package, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 40 Vdc, a collector-base voltage of 75 Vdc, and an emitter-base voltage of 6.0 Vdc. The collector current is rated at 600 mAdc, with a total power dissipation of 0.5 W at 25°C, derating linearly above that temperature. The device operates and stores within a junction temperature range of -65°C to +200°C. The forward current transfer ratio (hFE) ranges from 20 to 40 depending on operating conditions, with a collector-emitter saturation voltage of up to 0.3 V at 150 mA collector current and 15 mA base current. It is qualified to MIL-PRF-19500/495. The turn-on time is 45 µs, and the turn-off time is 310 µs under specified test conditions.