Microsemi Corp. Bipolar Transistors - BJT 2N5684

The 2N5684 is an NPN power silicon transistor in a TO-3 package, designed for high-current switching and amplifier applications. It has a collector-emitter voltage rating of 80 Vdc and a collector current rating of 50 Adc. The total power dissipation is 300 W at 25°C, derating linearly to 171 W at 100°C. Thermal resistance from junction to case is 0.584 °C/W. The device meets MIL-PRF-19500/466 qualification standards. Forward current transfer ratio ranges from 15 to 60 at 25 Adc collector current. Collector-emitter saturation voltage is up to 5.0 Vdc at 50 Adc collector and 10 Adc base current. Operating and storage junction temperature ranges from -65°C to +200°C.