Microsemi Corp. Bipolar Transistors - BJT 2N5683

NPN power silicon transistor for high-current switching applications, rated for 60 V collector-emitter voltage and 50 A collector current, housed in a TO-3 package. It dissipates 300 W at 25°C, derating linearly to 171 W at 100°C case temperature, with a junction-to-case thermal resistance of 0.584°C/W. Operating and storage junction temperatures range from -65°C to +200°C. Qualified per MIL-PRF-19500/466 at JAN, JANTX, and JANTXV levels. Forward current gain ranges from 30 to 60 at 5 A and 25 A collector current, with a collector-emitter saturation voltage of 1.0 V at 25 A collector and 2.5 A base current. Turn-on and turn-off times are 1.5 µs and 3.0 µs, respectively, under specified conditions.