The 2N5666 is an NPN power silicon switching transistor qualified per MIL-PRF-19500/455, housed in a TO-66 (TO-213AA) package. It has a collector-emitter voltage rating of 200 Vdc, a collector-base voltage rating of 250 Vdc, and a continuous collector current of 5.0 Adc. Power dissipation is 2.5 W at 25°C and 30 W at 100°C. The forward current transfer ratio ranges from 40 to 120 at collector currents of 0.5 A to 1.0 A and a collector-emitter voltage of 2.0 V to 5.0 V. Collector-emitter saturation voltage is 0.4 Vdc at 3.0 A collector current and 0.3 A base current. Turn-on time is 0.25 μ{s}, and turn-off time is 1.5 μ{s} under specified test conditions. The operating and storage junction temperature range is -65 to +200 °C.
Bipolar Transistors - BJT Power BJT
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N5666 |
| Product Name | Bipolar Transistors - BJT |
