Microsemi Corp. Bipolar Transistors - BJT 2N5581/TR

NPN silicon switching transistor in TO-206AB package, rated for 50 Vdc collector-emitter voltage, 75 Vdc collector-base voltage, and 800 mA continuous collector current. Maximum total power dissipation is 0.5 W at 25°C, derating linearly above this temperature. Current gain (hFE) ranges from 20 to 120 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 V at 150 mA collector and 15 mA base current. Turn-on time is 35 µs and turn-off time is 300 µs under specified test conditions. Qualified to MIL-PRF-19500/423. Operating and storage junction temperature range is -55°C to +200°C.