Microsemi Corp. Bipolar Transistors - BJT 2N5416UA/TR

The 2N5416UA/TR is a PNP silicon low-power transistor in a hermetically sealed ceramic UA package, designed for high-reliability and military applications requiring high-frequency switching. It has a collector-emitter voltage rating of 300 V, a collector-base voltage rating of 350 V, and a maximum collector current of 1.0 A. The device operates within a junction temperature range of -65 to +200 °C, with a thermal resistance junction-to-ambient of 234 °C/W and a total power dissipation of 0.275 W at +25 °C. The package is RoHS compliant, features gold-plated terminals, and is qualified to MIL-PRF-19500/485 and JANS levels. The UA package has a low profile with dimensions controlled by a maximum height of 0.075 inch and a base width of 0.155 inch.