Microsemi Corp. Bipolar Transistors - BJT 2N5416U4

The 2N5416U4 is a PNP silicon low-power transistor in a UA surface-mount package, designed for high-reliability and general-purpose low-power applications requiring high-frequency switching. It features a collector-emitter voltage rating of 300 V, a collector-base voltage rating of 350 V, and a continuous collector current of 1.0 A. The device operates over a junction temperature range of -65 °C to +200 °C, with a thermal resistance junction-to-case of 12 °C/W and junction-to-ambient of 145 °C/W. The transistor is hermetically sealed in an aluminum nitride ceramic body with gold over nickel plated terminations and meets MIL-PRF-19500/485 and JANS qualification standards for military applications. It is RoHS compliant.