Microsemi Corp. Bipolar Transistors - BJT 2N5339

NPN silicon switching transistor rated for 100 Vcollector-emitter and collector-base voltages and 5.0 A collector current, packaged in a TO-39 case with a maximum power dissipation of 17.5 W at Tₛ = 25°C. Electrical characteristics include a minimum forward current transfer ratio of 40 at 5.0 A collector current, collector-emitter saturation voltage up to 1.2 V at 5.0 A collector and 0.5 A base current, and base-emitter saturation voltage up to 1.8 V under the same conditions. The device meets MIL-PRF-19500/560 qualification standards with a junction temperature range of -65 to +200°C.