Microsemi Corp. JFETs (Junction Field Effect) - 2N5115 2N5115

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 134222-2N5115 Packaging: Bulk Mounting: Through Hole Polarity: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Current - Drain (Idss) @ Vds (Vgs=0): 60mA @ 15V Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA Resistance - RDS(On): 100 Ohm Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-18 (TO-206AA) Maximum Power Dissipation: 500mW Drain-Source Breakdown Voltage: 30V Max Input Capacitance: 25pF @ 15V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 134222-2N5115 Packaging: Bulk Mounting: Through Hole Polarity: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Current - Drain (Idss) @ Vds (Vgs=0): 60mA @ 15V Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA Resistance - RDS(On): 100 Ohm Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-18 (TO-206AA) Maximum Power Dissipation: 500mW Drain-Source Breakdown Voltage: 30V Max Input Capacitance: 25pF @ 15V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1
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JFETs (Junction Field Effect) - 2N5115 - 134222-2N5115 - Win Source Electronics
Laguna Hills, CA, United States
JFETs (Junction Field Effect) - 2N5115
134222-2N5115
JFETs (Junction Field Effect) - 2N5115 134222-2N5115
Manufacturer: Microsemi Corporation Win Source Part Number: 134222-2N5115 Packaging: Bulk Mounting: Through Hole Polarity: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Current - Drain (Idss) @ Vds (Vgs=0): 60mA @ 15V Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA Resistance - RDS(On): 100 Ohm Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-18 (TO-206AA) Maximum Power Dissipation: 500mW Drain-Source Breakdown Voltage: 30V Max Input Capacitance: 25pF @ 15V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 134222-2N5115
Packaging: Bulk
Mounting: Through Hole
Polarity: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 60mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
Resistance - RDS(On): 100 Ohm
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-18 (TO-206AA)
Maximum Power Dissipation: 500mW
Drain-Source Breakdown Voltage: 30V
Max Input Capacitance: 25pF @ 15V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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JFET JFETs

JFET JFETs

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Transistors
Product Number 134222-2N5115 2N5115
Product Name JFETs (Junction Field Effect) - 2N5115 JFET
Transistor Type JFET JFET
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