Microsemi Corp. Bipolar Transistors - BJT 2N5005

The 2N5005 is a PNP silicon power transistor in a TO-59 isolated package, rated for 5 A collector current, 80 V collector-emitter voltage, and 100 V collector-base voltage. It operates with a junction temperature range of -65°C to +200°C and has a thermal resistance of 3.0 °C/W junction-to-case. The device features a turn-on time of 0.5 µs and a fall time of 0.5 µs, with a common-emitter small-signal forward current transfer ratio (hfe) minimum of 50 at IC = 100 mA and f = 1 kHz. It meets MIL-PRF-19500/535 qualification levels for JAN, JANTX, and JANTXV, and is RoHS compliant in commercial grade. The collector lead is electrically isolated from the case.