Microsemi Corp. Bipolar Transistors - BJT 2N4854U/TR

The 2N4854U is a surface-mount, dual complementary NPN/PNP silicon transistor in a hermetically sealed ceramic 6-pin U package, designed for high-reliability military applications up to JANTXV level. The package measures 6.35 mm x 4.45 mm with a height of 2.54 mm and weighs 0.158 grams. It has a maximum collector current of 600 mA, collector-emitter voltage of 40 V, and collector-base voltage of 60 V. Power dissipation is 0.60 W total at +25°C ambient, with thermal resistance junction-to-ambient at 290 °C/W. The transistor features a forward current transfer ratio (hFE) ranging from 50 to 300, collector-emitter saturation voltage of 0.40 V, and base-emitter saturation voltage between 0.80 and 1.25 V. Switching times are 45 ns turn-on and 300 ns turn-off. It is qualified to MIL-PRF-19500/421 and RoHS compliant in commercial grade. The ordering suffix "/TR" indicates tape and reel packaging, consistent with the series.