Microsemi Corp. Bipolar Transistors - BJT 2N4449/TR

The 2N4449 is an NPN silicon transistor qualified to MIL-PRF-19500/317, available in TO-18 (TO-206AA) package. It has a collector-emitter voltage rating of 20 Vdc, a collector-base voltage of 40 Vdc, and an emitter-base voltage of 6.0 Vdc. Maximum power dissipation is 0.36 W at +25°C, with thermal resistance from ambient to case at 400°C/W. Current gain ranges from 20 to 120 at collector currents up to 100 mA and collector-emitter voltages of 1.0 Vdc. Collector-emitter saturation voltage is 0.45 V at 100 mA collector current and 10 mA base current. Switching times are 12 μs turn-on and 18 μs turn-off. Operating and storage junction temperature range is -65 to +200°C.