Microsemi Corp. Bipolar Transistors - BJT 2N4399

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Bipolar Transistors - BJT Power BJT
Description
Bipolar Transistors - BJT Power BJT
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The 2N4399 is a PNP high-power silicon transistor qualified to MIL-PRF-19500/433 JANTX level, housed in a TO-3 (TO-204AA) package. It has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 30 Adc, and a total power dissipation of 5.0 W at 25°C. Thermal resistance from junction to case is 0.875°C/W. Current gain ranges from 15 to 60 at a collector current of 10 A and collector-emitter voltage of 2.0 V. Collector-emitter saturation voltage is 0.75 V at a collector current of 10 A and base current of 1.0 A. The device operates from -55°C to +200°C.

Datasheet Summary
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The 2N4399 is a PNP high-power silicon transistor qualified to MIL-PRF-19500/433 JANTX level, housed in a TO-3 (TO-204AA) package. It has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 30 Adc, and a total power dissipation of 5.0 W at 25°C. Thermal resistance from junction to case is 0.875°C/W. Current gain ranges from 15 to 60 at a collector current of 10 A and collector-emitter voltage of 2.0 V. Collector-emitter saturation voltage is 0.75 V at a collector current of 10 A and base current of 1.0 A. The device operates from -55°C to +200°C.

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Bipolar Transistors - BJT
2N4399
Bipolar Transistors - BJT 2N4399
Bipolar Transistors - BJT Power BJT

Bipolar Transistors - BJT Power BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N4399
Product Name Bipolar Transistors - BJT
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