Microsemi Corp. Bipolar Transistors - BJT 2N4261UB/TR

The 2N4261UB/TR is a PNP silicon small signal transistor in a ceramic surface mount package with a gold-plated nickel terminal finish, compliant with MIL-PRF-19500/511 for JAN, JANTX, JANTXV, and JANS reliability levels. It has a maximum collector-emitter voltage of -15 V, collector current of -30 mA, and power dissipation of 0.2 W at 25 °C, with thermal resistance of 0.860 °C/W. The device features a low-profile, lightweight ceramic housing weighing less than 0.04 grams, and meets RoHS standards. Electrical characteristics include a forward-current transfer ratio of 20 to 150, collector-emitter saturation voltage of -0.15 V to -0.35 V, and switching times of 2.5 ns turn-on and 3.5 ns turn-off. Package dimensions are defined for the UB ceramic case, with pad assignments for base, emitter, collector, and shield.