Microsemi Corp. Bipolar Transistors - BJT 2N4033UA/TR

The 2N4033UA is a PNP silicon switching transistor in a surface mount package, rated for a collector-emitter voltage of 80 Vdc, a collector current of 1.0 Adc, and a total power dissipation of 0.5 W at +25°C. It operates across a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/512 qualification standards. The device has a collector-base cutoff current of 10 μAdc at 80 Vdc and a forward-current transfer ratio ranging from 25 to 300 depending on collector current. Switching characteristics include an on-time of 15 μs, rise time of 25 μs, storage time of 175 μs, and fall time of 35 μs under specified test conditions. The package features a castellated bottom with defined dimensions for pad placement and metallization.