Microsemi Corp. Bipolar Transistors - BJT 2N3838

The 2N3838 is a dual complementary NPN/PNP silicon small-signal transistor in a 6-pin flatpack package, designed for high-reliability military applications. The device is qualified to JANTXV level per MIL-PRF-19500/421 with a hermetic ceramic package featuring an Au-over-Ni plated Kovar cover and Au-over-Ni plated copper terminals. Maximum collector current is 600 mA per transistor, with a collector-emitter voltage rating of 40 V and collector-base voltage of 60 V. The junction and storage temperature range is -65 to +200 °C. Thermal resistance from junction to case is 250 °C/W for each transistor and 125 °C/W for the package. Forward current gain (hFE) ranges from 50 to 300 at 150 mA collector current. Switching times are 45 ns turn-on and 300 ns turn-off under saturated conditions. RoHS-compliant versions are available for commercial grade only.